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Microwave ferrites and dielectrics
Ferrite garnets with narrow and ultra-narrow ferromagnetic resonance line width
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Microwave ferrites and dielectricsFerrite garnets with narrow and ultra-narrow ferromagnetic resonance line width

 
Yttrium – Calcium Garnets
Y – Ca
 
a) Narrow line width materials
The garnets of this group have narrow FMR line width. They are especially suitable for application in microwave devices, including cryogenic ones, having low losses and efficient in wide frequency and temperature ranges.
 
Types
4πMs
(G)
±5%
ΔH
(-3dB)
(Oe)
*
ε'
±5%
tgδε
•104
geff 
±3%
Tc
(oC)
nominal
ΔHk
(Oe)
nominal
αMs
(% • oC-1)
(-60 ÷ +20)oC
(+20 ÷+85)oC
9CH1
1950
≤20
15.0
≤1.5
2
235
1.0
-0.22
-0.32
9CH
1900
≤12
15.0
≤1.5
2
215
1.0
-0.30
-0.36
9CHv
1850
≤10
14.8
≤1.5
2
215
1.0
-0.25
-0.33
15CH6

1600
≤10
15.0
≤1.5
2
220
1.0
-0.21
-0.32
15CH6v
1600
≤10
14.6
≤1.5
2
220
1.0
-0.25
-0.29
15CH8v
1500
≤10
14.9
≤1.5
2
215
1.0
-0.23
-0.30
25CHv
1400
≤10
14.5
≤1.5
2
215
1.0
-0.26
-0.31
35CHv
1200
≤10
14.5
≤1.5
2
208
1.0
-0.28
-0.32
40CH7v
1100
≤10
14.2
≤1.5
2
205
1.0
-0.28
-0.33
45CHv
1000
≤10
14.2
≤1.5
2
200
1.0
-0.20
-0.45
55CHv
800
≤15
14.0
≤1.5
2
190
1.0
-0.34
-0.37
85CHv
570
≤10
14.1
≤1.5
2
130
1.5
-0.56
-0.31
85CH
520
≤10
13.9
≤1.5
2
120
1.5
-0.50
-0.60
Frequency of measurement ΔH, ΔHk, ε’, tgδε - 9.4 GHz.
* Measurement is taken on optically finished sphere.
 
 
 
b) Super narrow line width materials
The garnets of this group feature the super narrow FMR line width of all YIG series. They have been designed for the lowest loss devices. Bandwidth improvements are obtained for non resonance applications.
 
Types
4πMs
(G)
±5%
ΔH
(-3dB)
(Oe)
*
ε'
 ±5%
tgδε
•104
geff
±3%
Tc
(oC)
nominal
ΔHk
(Oe)
nominal
αMs
(% • oC-1)
(-60÷+20)oC
(+20÷+85)oC
  9CH1s
1950
≤12
15.0
≤1.5
2
235
1.0
-0.22
-0.32
  9CHs
1900
≤8
15.0
≤1.5
2
215
1.0
-0.30
-0.36
  9CHvs
1850
≤6
14.8
≤1.5
2
215
1.0
-0.25
-0.33
  15CH6vs
1600
≤6
14.6
≤1.5
2
220
1.0
-0.25
-0.29
  15CH8vs
1500
≤6
14.9
≤1.5
2
215
1.0
-0.23
-0.31
  25CHvs
1400
≤6
14.5
≤1.5
2
215
1.0
-0.26
-0.31
  35CHvs
1200
≤6
14.5
≤1.5
2
208
1.0
-0.28
-0.32
  40CH7vs
1100
≤6
14.2
≤1.5
2
205
1.0
-0.28
-0.33
  45CHvs
1000
≤6
14.2
≤1.5
2
200
1.0
-0.20
-0.45
  55CHvs
800
≤8
14.0
≤1.5
2
190
1.0
-0.34
-0.37
Frequency of measurement ΔH, ΔHk, ε’, tgδε - 9.4 GHz.
* Measurement is taken on optically finished sphere.
 
 
 
Pure and doped Yttrium Garnets
Y
 
Pure Yttrium garnet is the basic ferromagnetic material for the whole series of YIG – doped compositions. They are used at cm-wave range.
 
Types
4πMs
(G)
±5%
ΔH
(-3dB)
(Oe)
ε'
±5%
tgδε
•104
geff
 ±3%
Tc
(oC)
nominal
ΔHk
(Oe)
nominal
αMs
(% •oC-1)
(-60÷ +20)oC
(+20÷ +85)oC
 10CH6B
1780
≤35
15.1
≤2
2
280
1.5
-0.20
-0.20
 10CH61
1780
≤25
15.2
≤2
2
280
1.5
-0.20
-0.20
 10CH62
1820
≤15
15.2
≤2
2
275
1.5
-0.21
-0.20
Frequency of measurement ΔH, ΔHk, ε’, tgδε - 9.4 GHz..
 
 
Yttrium – Aluminum Garnets
Y – Al
 
These garnets offer a wide choice of saturation magnetization. They are widely used in low power m-, dm- and cm-wave devices.
 
Types
4πMs
(G)
ΔH
(-3dB)
(Oe)
ε'
±5%
tgδε
•104
geff 
±3%
Tc
(oC)
nominal
ΔHk
(Oe)
nominal
αMs
(% •oC-1)
(-60÷ +20)oC
(+20÷ +85)oC
 20CH9
1500±5%
≤45
14.9
≤2
2
250
1.5
-0.20
-0.25
 20CH91
1500±5%
≤25
14.9
≤2
2
250
1.5
-0.20
-0.25
 20CH6
1400±5%
≤45
14.8
≤2
2
245
1.5
-0.20
-0.25
 20CH61
1400±5%
≤25
14.8
≤2
2
245
1.5
-0.20
-0.25
 30CH3B
1200±5%
≤45
14.6
≤2
2
230
1.5
-0.20
-0.25
 30CH31
1200±5%
≤25
14.6
≤2
2
230
1.5
-0.20
-0.25
 30CH12
1100±5%
≤45
14.5
≤2
2
220
1.5
-0.20
-0.25
 30CH121
1100±5%
≤25
14.5
≤2
2
220
1.5
-0.20
-0.25
 30CH9B
1000±5%
≤45
14.5
≤2
2
210
1.5
-0.20
-0.25
 30CH9B1
1000±5%
≤25
14.5
≤2
2
210
1.5
-0.20
-0.25
 40CH8
900±5%
≤45
14.4
≤2
2
200
1.5
-0.25
-0.30
 40CH81
900±5%
≤25
14.4
≤2
2
200
1.5
-0.25
-0.30
 40CH2B
800±5%
≤45
14.2
≤2
2
195
1.5
-0.30
-0.30
 40CH2B1
800±5%
≤25
14.2
≤2
2
195
1.5
-0.30
-0.30
 40CH5B
650±5%
≤45
14.2
≤2
2
175
1.5
-0.30
-0.35
 40CH5B1
650±5%
≤25
14.2
≤2
2
175
1.5
-0.30
-0.35
 50CH6
580±5%
≤45
14.1
≤2
2
165
1.5
-0.35
-0.40
 50CH61
580±5%
≤25
14.1
≤2
2
165
1.5
-0.35
-0.40
 60CHB
480±25G
≤40
14.0
≤2
2
150
1.5
-0.35
-0.45
 60CHB1
480±25G
≤25
14.0
≤2
2
150
1.5
-0.35
-0.45
 70CH
400±25G
≤40
13.9
≤2
2
130
2.0
-0.40
-0.50
 80CHB
320±25G
≤40
13.8
≤2
2
120
2.0
-0.40
-0.50
 90CHB
190±15G
≤25
13.7
≤2
2
95
2.0
-0.55
—
 90CHB1
175±25G
≤40
13.9
≤2
2
90
2.0
-0.54
—
Frequency of measurement ΔH, ΔHk, ε’, tgδε - 9.4 GHz.
 
 
 
 
Yttrium – Gadolinium & Yttrium – Gadolinium – Aluminum Garnets
Y – Gd ; Y – Gd – Al
 
These garnets have high thermal stability of saturation magnetization, good squareness of hysteresis loop and raised threshold power. They find wide application in average and high power non-reciprocal devises as well as controlled microwave.
 
Types
4πMs
(G)
±5%
ΔH
(-3dB)
(Oe)
ε'
±5%
tgδε
•104
geff
±3%
Tc
(oC)
nominal
ΔHk
(Oe)
nominal
α Ms
(% • oC-1)
(-60÷ +20)oC
(+20÷ +85)oC
 3CH20
1780
≤45
15.0
≤2
2.00
280
2
-0.20
-0.20
 4CH20
1600
≤45
14.9
≤2
2.00
280
4
-0.20
-0.20
 30CH6
1290
≤95
15.1
≤2
2.01
280
6
-0.10
-0.15
 5CH20
1200
≤75
15.2
≤2
2.01
280
8
+0.05
-0.10
 6CH20*
940
≤105
15.1
≤2
2.01
255
10
+0.05
-0.15
 8CH20
800
≤85
14.7
≤2
2.01
240
9
-0.05
-0.18
 10CH20
550
≤65
14.5
≤2
2.01
180
8
-0.10
-0.25
Frequency of measurement ΔH, ΔHk, ε’, tgδε - 9.4 GHz.
Frequency of measurement ΔH - 3.0 GHz.
 
 
 
 
Yttrium – Gadolinium – Aluminum Garnets, doped REE
Y – Gd – Al, doped REE    
 
These garnets have extremely high peak power level. They are used in devices which must operate at high peak power levels.
 
Types
4πMs
(G)
ΔH
(-3dB)
(Oe)
ε'
±5%
tgδε
•104
geff 
±3%
Tc
(oC)
nominal
ΔHk
(Oe)
nominal
α Ms
(% • oC-1)
(-60÷ +20)oC
(+20÷ +85)oC
 20CH8M
1280±5%
≤60
15.1
≤2
2.00
225
16
-0.20
-0.28
 40CH4
900±5%
≤160
15.5
≤2
2.01
280
14
+0.05
-0.10
 8CH21
800±5%
≤110
14.7
≤2
2.02
240
12
+0.05
-0.18
 50CH4
650±5%
≤50
14.7
≤2
2.01
150
16
+0.05
-0.3
 12CH20
490±25G
≤165
14.5
≤2
2.03
205
21
+0.17
-0.12
 60CH2
470±25G
≤48
14.5
≤2
2.02
130
19
+0.05
-0.45
Frequency of measurement ΔH, ΔHk, ε’, tgδε - 9.4 GHz.
 
 
 
 
Yttrium – Gadolinium – Indium & Yttrium – Gadolinium – Zirconium Garnets
Y – Gd – In; Y – Gd – Zr
 
These garnets have low losses and high thermal stability of saturation magnetization. They were developed for use in non-reciprocal average power devices.
 
Types
4πMs
(G)
ΔH
(-3dB)
(Oe)
ε'
±5%
tgδε
•104
geff
±3%
Tc
(oC)
nominal
ΔHk
(Oe)
nominal
αMs
(% • oC-1)
(-60÷ +20)oC
(+20÷ +85)oC
 20CH10M
1380±5%
≤20
15.0
≤2
2.00
240
5
-0.24
-0.24
 20CH7
1300±5%
≤42
15.1
≤2
2.00
225
6
-0.20
-0.28
 30CH11M
1220±5%
≤20
14.9
≤2
2.00
220
3
-0.26
-0.26
 30CH14
1200±5%
≤35
15.0
≤2
2.01
220
10
-0.13
-0.17
 30CH10
1150±5%
≤35
15.1
≤2
2.00
230
7
-0.10
-0.20
 40CH6M
850±5%
≤55
15.0
≤2
2.01
210
10
-0.10
-0.25
 50CH1M
630±5%
≤48
14.6
≤2
2.01
150
14
+0.05
-0.30
 50CH3
570±5%
≤90
14.0
≤3
2.01
210
2
-0.25
-0.35
 60CH1M
450±25G
≤48
14.5
≤2
2.02
135
13
+0.05
-0.45
 70CH1
400±25G
≤95
14.5
≤2
2.03
160
13
+0.14
-0.26
Frequency of measurement ΔH, ΔHk, ε’, tgδε - 9.4 GHz.


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